mmbz4681-v to mmbz4717-v vishay semiconductors 18078 12 3 document number 8 5771 rev. 1.6, 15-sep-10 www.vishay.com 1 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal zener diodes features ? silicon planar zener diodes. ? standard zener voltage tolerance is 5 %. other tolerances are available upon request. ? these diodes are also available in do-35 case with the type designation 1n46 8 1 to 1n4717 and sod-123 case with the type designation mmsz46 8 1-v to mmsz4717-v ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: sot-23 weight: approx. 8 . 8 mg terminals: solderable per mil-std-750, method 2026 packaging codes/options: gs1 8 /10 k per 13" reel ( 8 mm tape), 10 k/box gs0 8 /3 k per 7" reel ( 8 mm tape), 15 k/box absolute maximum ratings t amb = 25 c, unless otherwise specified note 1) on fr - 5 board using recommended solder pad layout. thermal characteristics t amb = 25 c, unless otherwise specified note 1) on fr - 5 board using recommended solder pad layout. parameter test conditions symbol value unit zener current (see table ?characteristics?) power dissipation p tot 350 1) mw parameter test conditions symbol value unit thermal resistance junction to ambient air r thja 420 1) k/w maximum junction temperature t j 150 c storage temperature range t stg - 55 to + 150 c
mmbz4681-v to mmbz4717-v vishay semiconductors document number 8 5771 rev. 1.6, 15-sep-10 www.vishay.com 2 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com electrical characteristics maximum v f = 0.9 v, at i f = 10 ma notes 1) tested with pulse test current 2) maximum voltage change (v z ). voltage change is equal to the difference between v z at 100 a and v z at 10 a. part number marking code zener voltage 1) max. reverse current reverse voltage max. voltage change v z at i zt = 50 a i r v r v z 2) v a v v typ. min. max. mmbz46 8 1-v cf 2.4 2.2 8 2.52 2 1 0. 8 0 mmbz46 8 2-v ch 2.7 2.57 2. 8 41 10. 8 5 mmbz46 8 3-v cj 3 2. 8 53.15 0. 8 10.90 mmbz46 8 4-v ck 3.3 3.14 3.47 7.5 1.5 0.95 mmbz46 8 5-v cm 3.6 3.42 3.7 8 7.5 2 0.95 mmbz46 8 6-v cn 3.9 3.71 4.10 5 2 0.97 mmbz46 8 7-v cp 4.3 4.09 4.52 4 2 0.99 mmbz46 88 -v ct 4.7 4.47 4.94 10 3 0.99 mmbz46 8 9-v cu 5.1 4. 8 55.36 10 3 0.97 mmbz4690-v cv 5.6 5.32 5. 88 10 4 0.96 mmbz4691-v ca 6.2 5. 8 96.51 10 5 0.95 mmbz4692-v cx 6. 8 6.46 7.14 10 5.1 0.90 mmbz4693-v cy 7.5 7.13 7. 88 10 5.7 0.75 mmbz4694-v cz 8 .2 7.79 8 .61 1 6.2 0.5 mmbz4695-v dc 8 .7 8 .27 9.14 1 6.6 0.1 mmbz4696-v dd 9.1 8 .65 9.56 1 6.9 0.0 8 mmbz4697-v de 10 9.50 10.5 1 7.6 0.1 mmbz469 8 -v df 11 10.50 11.6 0.05 8 .4 0.11 mmbz4699-v dh 12 11.40 12.6 0.05 9.1 0.12 mmbz4700-v dj 13 12.40 13.7 0.05 9. 8 0.13 mmbz4701-v dk 14 13.30 14.7 0.05 10.6 0.14 mmbz4702-v dm 15 14.30 15. 8 0.05 11.4 0.15 mmbz4703-v dn 16 15.20 16. 8 0.05 12.1 0.16 mmbz4704-v dp 17 16.20 17.9 0.05 12.9 0.17 MMBZ4705-V dt 1 8 17.10 1 8 .9 0.05 13.6 0.1 8 mmbz4706-v du 19 1 8 .10 20 0.05 14.4 0.19 mmbz4707-v dv 20 19.00 21 0.01 15.2 0.2 mmbz470 8 -v da 22 20.90 23.1 0.01 16.7 0.22 mmbz4709-v dz 24 22. 8 0 25.2 0.01 1 8 .2 0.24 mmbz4710-v dy 25 23. 8 026.30.01190.25 mmbz4711-v ea 27 25.70 2 8 .4 0.01 20.4 0.27 mmbz4712-v ec 2 8 26.60 29.4 0.01 21.2 0.2 8 mmbz4713-v ed 30 2 8 .50 31.5 0.01 22. 8 0.3 mmbz4714-v ee 33 31.40 34.7 0.01 25 0.33 mmbz4715-v ef 36 34.20 37. 8 0.01 27.3 0.36 mmbz4716-v eh 39 37.10 41 0.01 29.6 0.39 mmbz4717-v ej 43 40.90 45.2 0.01 32.6 0.43
mmbz4681-v to mmbz4717-v vishay semiconductors document number 8 5771 rev. 1.6, 15-sep-10 www.vishay.com 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com typical characteristics (t amb = 25 c, unless otherwise specified) figure 1. total power dissipat ion vs. ambient temperature figure 2. typical change of work ing voltage under operating conditions at t amb = 25 c figure 3. typical change of working voltage vs. junction temperature 0 120 160 0 100 300 400 500 600 p tot - total po w er dissipation (m w ) t am b - am b ient temperat u re (c) 200 95 9602 200 80 40 10 15 20 1 10 100 1000 v z - v oltage change (m v ) v z - z- v oltage ( v ) 25 95 9598 t j = 25 c i z = 5 ma 0 5 - 60 60 120 180 0.8 0.9 1.0 1.1 1.2 1.3 v ztn - relative voltage change t j - junction temperature (c) 240 95 9599 0 v ztn = v zt /v z (25 c) 0 tk vz = 10 x 10 -4 /k 8 x 10 -4 /k 2 x 10 -4 /k 6 x 10 -4 /k 4 x 10 -4 /k - 4 x 10 -4 /k - 2 x 10 -4 /k figure 4. temperature coefficient of v z vs. z-voltage figure 5. diode capacitance vs. z-voltage figure 6. forward current vs. forward voltage - 5 0 5 10 15 v z - z- v oltage ( v ) 95 9600 i z = 5 ma 0 1020304050 tk v z - temperat u re coefficient of v z (10 -4 /k) 10 15 0 50 100 150 200 c d - diode capacitance (pf) v z - z- v oltage ( v ) 25 95 9601 20 t j = 25 c v r = 2 v 0 5 0 0.2 0.4 0.6 0.8 0.001 0.01 0.1 1 10 100 1.0 95 9605 i f - for w ard c u rrent (ma) v f - for w ard v oltage ( v ) t j = 25 c
mmbz4681-v to mmbz4717-v vishay semiconductors document number 8 5771 rev. 1.6, 15-sep-10 www.vishay.com 4 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com figure 7. z-current vs. z-voltage figure 8 . z-current vs. z-voltage 8 20 95 9604 0 20 40 60 80 100 i z - z-c u rrent (ma) p tot = 500 m w t am b = 25 c 046 12 v z - z- v oltage ( v ) 15 20 25 30 0 10 20 30 40 50 i z - z-c u rrent (ma) v z - z- v oltage ( v ) 35 95 9607 p tot = 500 m w t am b = 25 c figure 9. differential z-resistance vs. z-voltage 0 101520 1 10 100 1000 25 95 9606 t j = 25 c i z = 1 ma 5 ma 10 ma v z - z- v oltage ( v ) r z - differential z-resistance ( ) 5 figure 10. thermal response 1 10 100 1000 z thp - thermal resistance for p u lse cond. (k w ) t p - p u lse length (ms) 95 9603 10 -1 10 0 10 1 10 2 t p /t = 0.5 t p /t = 0.2 t p /t = 0.1 t p /t = 0.05 t p /t = 0.02 t p /t = 0.01 single p u lse r thja = 300 k/ w t = t jmax - t am b i zm = (- v z + ( v z 2 + 4r zj x t/z thp ) 1/2 )/(2r zj )
mmbz4681-v to mmbz4717-v vishay semiconductors document number 8 5771 rev. 1.6, 15-sep-10 www.vishay.com 5 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeter s (inches): sot-23 foot print recommendation: rev. 8 - date: 23.sept.2009 17418 document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.95 (0.037) 0.95 (0.037) 2 (0.079) 0.7 (0.028) 0.9 (0.035) 0 to 8 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)
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